Datenblatt-Suchmaschine für elektronische Bauteile |
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STU2N62K3 Datenblatt(PDF) 8 Page - STMicroelectronics |
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STU2N62K3 Datenblatt(HTML) 8 Page - STMicroelectronics |
8 / 25 page Electrical characteristics STB/D/F/P/U2N62K3 8/25 Doc ID 018898 Rev 2 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs starting Tj VGS(th) 1.00 0.95 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 75 25 125 1.05 0.90 0.85 0.75 ID=50µA AM09190v1 RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 75 25 125 0 2.5 ID=1.1A VGS=10V AM09191v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ=-50°C TJ=150°C TJ=25°C 0.7 0.8 0.9 AM09193v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 ID=1mA AM09192v1 EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 10 20 30 40 120 140 80 90 ID=2.2 A VDD=50 V 50 60 70 AM09180v1 |
Ähnliche Teilenummer - STU2N62K3 |
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Ähnliche Beschreibung - STU2N62K3 |
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