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74AVC2T45GN Datenblatt(PDF) 9 Page - NXP Semiconductors

Teilenummer 74AVC2T45GN
Bauteilbeschribung  Dual-bit, dual-supply voltage level translator/transceiver; 3-state
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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74AVC2T45GN Datenblatt(HTML) 9 Page - NXP Semiconductors

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74AVC2T45
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 7 — 8 February 2013
9 of 27
NXP Semiconductors
74AVC2T45
Dual-bit, dual-supply voltage level translator/transceiver; 3-state
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
ten is a calculated value using the formula shown in Section 13.4 “Enable times”
[1]
tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH.
ten is a calculated value using the formula shown in Section 13.4 “Enable times”
[1]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD  VCC2  fi  N+ (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L  VCC
2
 f
o) = sum of the outputs.
[2]
fi = 10 MHz; VI =GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .
Table 9.
Typical dynamic characteristics at VCC(A) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7
Symbol Parameter
Conditions
VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
tpd
propagation delay
A to B
15.5
8.1
7.6
7.7
8.4
9.2
ns
B to A
15.5
12.7
12.3
12.2
12.0
11.8
ns
tdis
disable time
DIR to A
12.2
12.2
12.2
12.2
12.2
12.2
ns
DIR to B
11.7
7.9
7.6
8.2
8.7
10.2
ns
ten
enable time
DIR to A
27.2
20.6
19.9
20.4
20.7
22.0
ns
DIR to B
27.7
20.3
19.8
19.9
20.6
21.4
ns
Table 10.
Typical dynamic characteristics at VCC(B) = 0.8 V and Tamb = 25 C [1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8; for wave forms see Figure 6 and Figure 7
Symbol Parameter
Conditions
VCC(A)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
tpd
propagation delay
A to B
15.5
12.7
12.3
12.2
12.0
11.8
ns
B to A
15.5
8.1
7.6
7.7
8.4
9.2
ns
tdis
disable time
DIR to A
12.2
4.9
3.8
3.7
2.8
3.4
ns
DIR to B
11.7
9.2
9.0
8.8
8.7
8.6
ns
ten
enable time
DIR to A
27.2
17.3
16.6
16.5
17.1
17.8
ns
DIR to B
27.7
17.6
16.1
15.9
14.8
15.2
ns
Table 11.
Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C [1][2]
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VCC(A) and VCC(B)
Unit
0.8 V
1.2 V
1.5 V
1.8 V
2.5 V
3.3 V
CPD
power dissipation
capacitance
A port: (direction A to B);
B port: (direction B to A)
122
222
pF
A port: (direction B to A);
B port: (direction A to B)
911
11
12
14
17
pF


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