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2PA1774QMB Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2PA1774QMB Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 12 page 2PA1774XMB_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 23 March 2012 3 of 12 NXP Semiconductors 2PA1774xMB series 40 V, 100 mA PNP general-purpose transistors 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, mounting pad for collector 1 cm2. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 5V IC collector current - 100 mA ICM peak collector current single pulse; tp 1ms - 200 mA IBM peak base current single pulse; tp 1ms - 100 mA Ptot total power dissipation Tamb 25 C [1][2] -250 mW [3][2] -590 mW Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C |
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