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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRL1104PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRL1104PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRL1104PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.04 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.008 VGS = 10V, ID = 62A ––– ––– 0.012 VGS = 4.5V, ID = 52A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 53 ––– ––– S VDS = 25V, ID = 62A ––– ––– 25 VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 68 ID = 62A Qgs Gate-to-Source Charge ––– ––– 24 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 33 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 18 ––– VDD = 20V tr Rise Time ––– 257 ––– ID = 62A td(off) Turn-Off Delay Time ––– 32 ––– RG = 3.6Ω, VGS = 4.5V tf Fall Time ––– 64 ––– RD = 0.4Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3445 ––– VGS = 0V Coss Output Capacitance ––– 1065 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 270 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nA S D G IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resis- IGSS LD Internal Drain Inductance 4.5 LS Internal Source Inductance 7.5 ns µA nH Ω Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V trr Reverse Recovery Time ––– 84 126 ns TJ = 25°C, IF = 62A Qrr Reverse Recovery Charge ––– 223 335 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 416 104
S D G Source-Drain Ratings and Characteristics VDD = 15V, starting TJ = 25°C, L = 0.18mH RG = 25Ω, IAS =62A. (See Figure 12)
Calculated continuous current based on maximum allowable junction temperature;for recommended current-handling of the package refer to Design Tip # 93-4 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width ≤ 300µs; duty cycle ≤ 2%. ISD ≤ 62A, di/dt ≤ 217A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: |
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