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IRF6621PbF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF6621PbF
Bauteilbeschribung  DirectFETPower MOSFET 
Download  10 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6621PbF Datenblatt(HTML) 1 Page - International Rectifier

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www.irf.com
1
5/24/06
DirectFET
™ Power MOSFET ‚
Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance Vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.29mH, RG = 25Ω, IAS = 9.6A.
Notes:
DirectFET
™ ISOMETRIC
SQ
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
5
10
15
20
25
TJ = 25°C
TJ = 125°C
ID = 12A
0
4
8
12
16
20
24
28
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VDS= 24V
VDS= 15V
ID= 9.6A
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 7.0m
Ω@ 10V 9.3mΩ@ 4.5V
SQ
SX
ST
MQ
MX
MT
MP
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
Max.
9.6
55
96
±20
30
12
13
9.6
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
11.7nC
4.2nC
1.0nC
10nC
6.9nC
1.8V
PD - 97093
IRF6621PbF
IRF6621TRPbF
l RoHS Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques



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