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SI4831DY-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI4831DY-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si4831DY Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71061 S-61859—Rev. A, 10-Oct-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 1.25 1.50 0 0.04 0.08 0.12 0.16 0.20 02468 10 –0.6 –0.4 –0.2 –0.0 0.2 0.4 0.6 0.8 –50 –25 0 25 50 75 100 125 150 1 10 20 ID = 5.7 A ID = 250 mA Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) 0.00 0.25 0.50 0.75 1.00 TJ = 25_C TJ = 150_C Single Pulse Power, Junction-to-Ambient Time (sec) 40 32 24 16 8 0 0.01 0.1 1 10 30 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 600 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 82_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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