Si4831DY

Vishay Siliconix

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2-4

Document Number: 71061

S-61859—Rev. A, 10-Oct-99

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

1.25

1.50

0

0.04

0.08

0.12

0.16

0.20

02468

10

–0.6

–0.4

–0.2

–0.0

0.2

0.4

0.6

0.8

–50

–25

0

25

50

75

100

125

150

1

10

20

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

0.00

0.25

0.50

0.75

1.00

Single Pulse Power, Junction-to-Ambient

Time (sec)

40

32

24

16

8

0

0.01

0.1

1

10

30

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

2

1

0.1

0.01

1

10

600

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

100

1. Duty Cycle, D =

Notes:

4. Surface Mounted