SI7491DP-T1-E3 datasheet(2/8 Pages) VISHAY

Teilenummer	SI7491DP-T1-E3

Bauteilbeschribung	P-Channel 30-V (D-S) MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 72276

S09-0270-Rev. C, 16-Feb-09

Vishay Siliconix

Si7491DP

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1.0

- 3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 70 °C

- 10

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 10 V

- 30

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 18 A

0.007

0.0085

Ω

VGS = - 4.5 V, ID = - 14 A

0.0105

0.013

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 18 A

46

S

Diode Forward Voltagea

VSD

IS = - 4.5 A, VGS = 0 V

- 0.74

- 1.1

V

Dynamicb

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 5 V, ID = - 18 A

56

85

nC

Gate-Source Charge

Qgs

12

Gate-Drain Charge

Qgd

25

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 15 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω

150

225

ns

Rise Time

tr

190

290

Turn-Off Delay Time

td(off)

120

180

Fall Time

tf

90

140

Gate Resistance

Rg

2.5

Source-Drain Reverse Recovery Time

trr

IF = - 2.9 A, dI/dt = 100 A/µs

50

80

Output Characteristics

0

10

20

30

40

50

0

1234

5

VGS = 10 V thru 4 V

VDS - Drain-to-Source Voltage (V)

3 V

Transfer Characteristics

0

10

20

30

40

50

60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

Ähnliche Beschreibung - SI7491DP-T1-E3

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