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MCR100-5-A1G Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Teilenummer MCR100-5-A1G
Bauteilbeschribung  Thyristors
Download  3 Pages
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MCR100-5-A1G Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8
Thyristors
Small Signal Diode
DO-92
A
B
G
E
Epitaxial planar die construction
Surface device type mounting
F
Moisture sensitivity level 1
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
C
Pb free version and RoHS compliant
Case :
TO-92 plastic package
D
Min
Max
Min
Max
Package
Packing
4.50 4.70 0.177
0.185
TO-92
4k/ box
4.50 4.70 0.177
0.185
TO-92
4k/ box
12.50
0.492
TO-92
4k/ box
0.35 0.45 0.013
0.017
TO-92
4k/ box
3.50 3.70 0.137
0.145
TO-92
4k/ box
1.00 1.20 0.039
0.047
TO-92
4k/ box
0.29 0.39 0.011
0.015
Maximum Ratings and Electrical Characteristics
Maximum Ratings
Notes:1. Valid provided that electrodes are kept at ambient temperature
Peak Forward Surge Current,TA=25℃
(1/2 Cycle,Sine Wave,60Hz)
Features
Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
MCR100-6 A1/A1G
Dimensions
Unit (mm)
Unit (inch)
A
B
Mechanical Data
V
Weight : 0.19gram (approximately)
Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
MCR100-4 A1/A1G
MCR100-3 A1/A1G
High temperature soldering guaranteed: 260°C/10s
Ordering Information
Part No.
MCR100-7 A1/A1G
5
C
F
MCR100-8 A1/A1G
MCR100-5 A1/A1G
ITSM
Peak Repetitive Forward and Reverse
Blocking Voltage(TJ=25℃ TO 125℃,
RGK=1KΩ)
VDRM and VRRM
MCR100-3
MCR100-4
MCR100-5
MCR100-6
MCR100-7
MCR100-8
Circuit Fusing Considerations(t= 8.3 ms)
Symbol
Forward Current RMS(All Conduction Angles)
Type Number
Reverse Peak Gate Current(TA=25℃,PW≤1 us)
VGRM
I
2t
Forward Average Gate Power(TA=25℃)
PGF(AV)
Forward Peak Gate Power (TA=25℃,PW≤1 us)
PGM
0.01
100
200
300
400
500
600
10
0.415
0.1
W
A
A
2s
A
V
W
0.8
Rating at 25°C ambient temperature unless otherwise specified.
D
G
E
Units
IT(RMS)
Value
Forward Peak Gate Current(TA=25℃,PW≤1 us)
IGFM
A
1
Version:B12


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