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PZT2222AT1 Datenblatt(PDF) 1 Page - Motorola, Inc |
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PZT2222AT1 Datenblatt(HTML) 1 Page - Motorola, Inc |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. • Available in 12 mm tape and reel Use PZT2222AT1 to order the 7 inch/1000 unit reel. Use PZT2222AT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation up to TA = 25°C(1) PD 1.5 Watts Storage Temperature Range ° Tstg – 65 to +150 °C Junction Temperature ° TJ 150 °C THERMAL CHARACTERISTICS Thermal Resistance from Junction to Ambient R θJA 83.3 °C/W Lead Temperature for Soldering, 0.0625 ″ from case Time in Solder Bath TL 260 10 °C Sec DEVICE MARKING P1F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector-Base Breakdown Voltage (IC = 10 µAdc, IE = 0) V(BR)CBO °75° °—° Vdc Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) V(BR)EBO 6.0 — Vdc Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) IBEX — 20 nAdc Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = – 3.0 Vdc) ICEX — 10 nAdc Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO — 100 nAdc 1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by PZT2222AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 BASE 1 COLLECTOR 2, 4 3 EMITTER PZT2222AT1 SOT-223 PACKAGE NPN SILICON TRANSISTOR SURFACE MOUNT Motorola Preferred Device CASE 318E-04, STYLE 1 TO-261AA 1 2 3 4 REV 2 |
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