2SA1241 datasheet(1/5 Pages) TOSHIBA

Teilenummer	2SA1241

Bauteilbeschribung	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

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2SA1241

2010-08-24

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1241

Power Amplifier Applications

Power Switching Applications

• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)

• Excellent switching time: tstg = 1.0 μs (typ.)

• Complementary to 2SC3076

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

−50

V

Collector-emitter voltage

VCEO

−50

V

Emitter-base voltage

VEBO

−5

V

Collector current

IC

−2

A

Base current

IB

−1

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

PC

10

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit：mm

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

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