Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK210-Y Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SK210-Y Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK210 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK210 FM Tuner Applications VHF Band Amplifier Applications • High power gain: GPS = 24dB (typ.) (f = 100 MHz) • Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDO −18 V Gate current IG 10 mA Drain power dissipation PD 100 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = −1.0 V, VDS = 0 V ⎯ ⎯ −10 nA Gate-drain breakdown voltage V (BR) GDO IG = −100 μA −18 ⎯ ⎯ V Drain current IDSS (Note) VGS = 0 V, VDS = 10 V 3 ⎯ 24 mA Gate-source cut-off voltage VGS (OFF) VDS = 10 V, ID = 1 μA −1.2 −3 ⎯ V Forward transfer admittance ⎪Yfs⎪ VGS = 0 V, VDS = 10 V, f = 1 kHz ⎯ 7 ⎯ mS Input capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz ⎯ 3.5 ⎯ pF Reverse transfer capacitance Crss VGD = −10 V, f = 1 MHz ⎯ ⎯ 0.65 pF Power gain GPS VDD = 10 V, f = 100 MHz (Figure 1) ⎯ 24 ⎯ dB Noise figure NF VDD = 10 V, f = 100 MHz (Figure 1) ⎯ 1.8 3.5 dB Note: IDSS classificatopn Y: 3.0~7.0 mA, GR (R): 6.0~14.0 mA, BL (L): 12.0~24.0 mA Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 2-3F1C Weight: 0.012 g (typ.) |
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