Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3196 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2N3196 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon PNP Power Transistors 2N3196 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;IB=0 -60 V VCE(sat) Collector-emitter saturation voltage IC=-5A; IB=-1A -1.5 V VBE(on) Base-emitter on voltage IC=-5A ; VCE=-4V -2.0 V ICEO Collector cut-off current VCE=Rated VCEO; IB=0 -5.0 mA ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 mA hFE-1 DC current gain IC=-0.3A ; VCE=-4V 30 hFE-2 DC current gain IC=-3A ; VCE=-4V 15 |
Ähnliche Teilenummer - 2N3196 |
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Ähnliche Beschreibung - 2N3196 |
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