2N5880 datasheet(2/3 Pages) SAVANTIC

Teilenummer	2N5880

Bauteilbeschribung	Silicon PNP Power Transistors

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Hersteller	SAVANTIC [Savantic, Inc.]

Direct Link	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

2

Silicon PNP Power Transistors

2N5879 2N5880

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2N5879

-60

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5880

IC=-0.2A ;IB=0

-80

V

VCEsat-1

Collector-emitter saturation voltage

IC=-7A;IB=-0.7A

-1.0

V

VCEsat-2

Collector-emitter saturation voltage

IC=-15A;IB=-3.75A

-4.0

V

VBEsat

Base-emitter saturation voltage

IC=-15A;IB=-3.75A

-2.5

V

VBE

Base-emitter on voltage

IC=-6A ; VCE=-4V

-1.5

V

ICBO

Collector cut-off current

VCB=ratedVCBO; IB=0

-0.5

mA

2N5879

VCE=-30V; IB=0

ICEO

Collector

cut-off current

2N5880

VCE=-40V; IB=0

-1.0

mA

ICEX

Collector cut-off current

VCE=ratedVCE; VBE=-1.5V

TC=150

-0.5

-5.0

mA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-1.0

mA

hFE-1

DC current gain

IC=-2A ; VCE=-4V

35

hFE-2

DC current gain

IC=-6A ; VCE=-4V

20

100

hFE-3

DC current gain

IC=-15A ; VCE=-4V

4

fT

Trainsistion frequency

IC=-1A ; VCE=-10V

4

MHz

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