High Voltage Switch Mode Application

• High Voltage, High Speed Switching

• Suitable for Switching regulator, Inverters motor controls

• 150℃ Max Operating temperature

KSB13003ER

150℃ Max. Operating temperature

• 8KV ESD proof at HBM (C=100㎊, R=1.5㏀)

CHARACTERISTICS

SYMBOL

RATING

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Collector Emitter Voltage

V

700

700

400

V

V

V

1.5 Amperes

NPN Silicon Power Transistor

1.1 Watts

TO-92

1. Emitter

2. Collector

3. Base

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Storage Temperature

Max. Operating Junction Temperature

400

9

1.5

1.1

-65~150

150

V

V

A

W

℃

℃

2

1

3

CHARACTERISTICS

SYMBOL

Test Condition

Min

Typ.

Max

Unit

Collector-Base Breakdown Voltage

700

V

Collector-Emitter Breakdown Voltage

400

V

Emitter Cut-off Current

10

㎂

*DC Current Gain

9

3

38

*Collector-Emitter Saturation Voltage

0.5

1.0

3.0

V

V

V

*Base-Emitter Saturation Voltage

1.0

1.2

V

V

Output Capacitance

21

㎊

Current Gain Bandwidth Product

4

㎒

TTi

t

11

Turn on Time

Vcc=125V, Ic=2A

1.1

㎲

Storage Time

4.0

㎲

Fall Time

0.7

㎲

* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

Note.

Package Mark information.

hFE1

R

15 ~ 25

O

20 ~ 30

S

ER

130 03

R

Pin connection (ECB)

YWW

Y; year code

WW; week code

◎ SEMIHOW REV.A0,Apr 2008

Classification

O

20 ~ 30

Y

25 ~ 35

1 3 0 0 3

YWW Z

YWW

Y; year code, WW; week code

Z

hFE1 Classification