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IRF6623TRPBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF6623TRPBF
Bauteilbeschribung  DirectFETPower MOSFET
Download  9 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6623TRPBF Datenblatt(HTML) 1 Page - International Rectifier

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www.irf.com
1
5/3/06
Notes
 through Š are on page 2
Description
The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufac-
turing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, improving previous best thermal resistance by 80%.
The IRF6623PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6623PbF has been optimized for param-
eters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to
minimize losses in the control FET socket.
VDSS
RDS(on) max
Qg(typ.)
20V
5.7m
Ω@VGS = 10V
11nC
9.7m
Ω@VGS = 4.5V
DirectFET
™ ISOMETRIC
ST
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
i
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Ãf
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
f
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Power Dissipation
i
PD @TA = 25°C
Power Dissipation
f
W
PD @TA = 70°C
Power Dissipation
f
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
fj
–––
58
RθJA
Junction-to-Ambient
gj
12.5
–––
RθJA
Junction-to-Ambient
hj
20
–––
°C/W
RθJC
Junction-to-Case
ij
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Max.
16
13
120
±20
20
55
-40 to + 150
42
0.017
1.4
2.1
43
40
PD - 97085
IRF6623PbF
IRF6623TRPbF
l RoHS Compliant
‰
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
‰
l Compatible with existing Surface Mount Techniques
‰
DirectFET
™ Power MOSFET Š


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