IRF6709S2TR1PBF datasheet(4/10 Pages) IRF

Teilenummer	IRF6709S2TR1PBF

Bauteilbeschribung	DirectFETPower MOSFET

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Hersteller	IRF [International Rectifier]

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IRF6709S2TR/TR1PbF

4

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Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM

2.5V

≤60µs PULSE WIDTH

Tj = 25°C

2.5V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1

10

100

2.5V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP

10V

5.0V

4.5V

4.0V

3.5V

3.0V

2.8V

BOTTOM

2.5V

-60 -40 -20 0 20 40 60 80 100120140160180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 12A

VGS = 10V

VGS = 4.5V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

10 20 30 40 50 60 70 80 90 100

ID, Drain Current (A)

5

10

15

20

25

30

TJ = 25°C

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 10V

1

2

3

4

5

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 175°C

TJ = 25°C

TJ = -40°C

VDS = 15V

≤60µs PULSE WIDTH

IRF6709S2TR1PBF Datenblatt(PDF) 4 Page - International Rectifier

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