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IRF6892SPBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF6892SPBF
Bauteilbeschribung  DirectFET짰 MOSFET with Schottky Diode
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6892SPBF Datenblatt(HTML) 2 Page - International Rectifier

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IRF6892STR/TR1PbF
2
www.irf.com
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
11
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.3
1.7
–––
2.0
2.6
VGS(th)
Gate Threshold Voltage
1.1
1.8
2.1
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-9.8
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
500
μA
–––
–––
5.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
290
–––
–––
S
Qg
Total Gate Charge
–––
17
25
Qgs1
Pre-Vth Gate-to-Source Charge
–––
4.0
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.3
–––
Qgd
Gate-to-Drain Charge
–––
6.0
–––
Qgodr
Gate Charge Overdrive
–––
4.7
–––
See Fig. 2 & 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
8.3
–––
Qoss
Output Charge
–––
16
–––
nC
RG
Gate Resistance
–––
0.4
Ω
td(on)
Turn-On Delay Time
–––
12
–––
tr
Rise Time
–––
30
–––
td(off)
Turn-Off Delay Time
–––
16
–––
tf
Fall Time
–––
9.5
–––
Ciss
Input Capacitance
–––
2510
–––
Coss
Output Capacitance
–––
850
–––
Crss
Reverse Transfer Capacitance
–––
190
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
Ãg
VSD
Diode Forward Voltage
–––
–––
0.75
V
trr
Reverse Recovery Time
–––
22
33
ns
Qrr
Reverse Recovery Charge
–––
37
56
nC
VDS = VGS, ID = 50μA
m
Ω
nA
nC
VGS = 4.5V, ID = 22A i
–––
–––
–––
76
220
VDS = 13V
ID = 22A
MOSFET symbol
–––
ns
pF
VGS = 0V
di/dt = 300A/μs
i
TJ = 25°C, IS = 22A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IF = 22A
VGS = 16V
VGS = -16V
VDS = 20V, VGS = 0V
VDS = 13V
VDS = 20V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 1mA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 28A i
RG= 1.8Ω
VDS = 13V, ID = 22A
Conditions
ƒ = 1.0MHz
VDS = 10V, VGS = 0V
VDD = 13V, VGS = 4.5VÃi
VGS = 4.5V
ID = 22A


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