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IRF7748L1PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF7748L1PBF
Bauteilbeschribung  DirectFET??Power MOSFET
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7748L1PBF Datenblatt(HTML) 1 Page - International Rectifier

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© 2012 International Rectifier
February 18, 2013
Base part number
Package Type
Standard Pack
Orderable Part Number
 
 
Form
Quantity
IRF7748L1TRPbF
DirectFET Large Can
Tape and Reel
4000
IRF7748L1TRPbF
Applications

RoHS Compliant, Halogen Free 

Lead-Free (Qualified up to 260°C Reflow) 

Ideal for High Performance Isolated Converter
Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible 

Compatible with existing Surface Mount Techniques 

Industrial Qualified
DirectFET™ Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
 
 
L6
Ordering Information
VDSS
VGS
RDS(on)
60V min
±20V max
1.7m
@ 10V
Qg tot
Qgd
Vgs(th)
146nC
40nC
2.9V
D
D
G
S
SS
SS
S
Applicable DirectFET Outline and Substrate Outline
 
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
60
V
VGS
Gate-to-Source Voltage
±20
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
148
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
104
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
28
A  
IDM
Pulsed Drain Current
592
 
EAS
Single Pulse Avalanche Energy 
129
mJ
IAR
Avalanche Current 
89
A
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
 
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A.
0
25
50
75
100
125
150
175
200
ID, Drain Current (A)
1.0
1.5
2.0
2.5
3.0
V GS = 7V
V GS = 6V
V GS = 10V
V GS = 12V
Fig 2. Typical On-Resistance vs. Drain Current
2
4
6
8
10
12
14
16
18
20
V GS, Gate -to -Source Voltage (V)
0
2
4
6
8
I D = 89A
T J = 25°C
T J = 125°C
IRF7748L1TRPbF
Typical values (unless otherwise specified)


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