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IRF7748L1PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7748L1PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 10 page 1 www.irf.com © 2012 International Rectifier February 18, 2013 Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRF7748L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7748L1TRPbF Applications RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260°C Reflow) Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques Industrial Qualified DirectFET™ Power MOSFET Fig 1. Typical On-Resistance vs. Gate Voltage DirectFET™ ISOMETRIC L6 Ordering Information VDSS VGS RDS(on) 60V min ±20V max 1.7m @ 10V Qg tot Qgd Vgs(th) 146nC 40nC 2.9V D D G S SS SS S Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag- ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys- tem reliability improvements, and makes this device ideal for high performance power converters. Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 148 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 104 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 28 A IDM Pulsed Drain Current 592 EAS Single Pulse Avalanche Energy 129 mJ IAR Avalanche Current 89 A Notes Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A. 0 25 50 75 100 125 150 175 200 ID, Drain Current (A) 1.0 1.5 2.0 2.5 3.0 V GS = 7V V GS = 6V V GS = 10V V GS = 12V Fig 2. Typical On-Resistance vs. Drain Current 2 4 6 8 10 12 14 16 18 20 V GS, Gate -to -Source Voltage (V) 0 2 4 6 8 I D = 89A T J = 25°C T J = 125°C IRF7748L1TRPbF Typical values (unless otherwise specified) |
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