Datenblatt-Suchmaschine für elektronische Bauteile |
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FCD620N60ZFCT-ND Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FCD620N60ZFCT-ND Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page November 2013 ©2013 Fairchild Semiconductor Corporation FCD620N60ZF Rev. C3 www.fairchildsemi.com 1 FCD620N60ZF N-Channel SuperFET® II FRFET® MOSFET 600 V, 7.3 A, 620 m Ω Features •650 V @ TJ = 150oC •Typ. RDS(on) = 528 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective output Capacitance (Typ. Coss(eff.) = 71 pF) • 100% Avalanche Tested • ESD Improved Capacity •RoHS Compliant Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Invertor / AC-DC Power Supply Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCD620N60ZF Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1 Hz) ±30 ID Drain Current - Continuous (TC = 25oC) 7.3 A - Continuous (TC = 100oC) 4.6 IDM Drain Current - Pulsed (Note 1) 21.9 A EAS Single Pulsed Avalanche Energy (Note 2) 135 mJ IAR Avalanche Current (Note 1) 1.5 A EAR Repetitive Avalanche Energy (Note 1) 0.89 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 89 W - Derate Above 25oC0.71 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCD620N60ZF Unit RθJC Thermal Resistance, Junction to Case, Max. 1.4 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 100 D-PAK G S D G D S |
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