Datenblatt-Suchmaschine für elektronische Bauteile |
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FCD900N60Z Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FCD900N60Z Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page December 2013 ©2012 Fairchild Semiconductor Corporation FCD900N60Z Rev. C3 www.fairchildsemi.com 1 D-PAK G S D G D S FCD900N60Z N-Channel SuperFET® II MOSFET 600 V, 4.5 A, 900 m Ω Features •650 V @ TJ = 150°C •Typ. RDS(on) = 820 mΩ • Ultra Low Gate Charge (Typ. Qg = 13 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) • 100% Avalanche Tested • ESD Improved Capacity •RoHS Compliant Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Inverter • Charger Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfor- mance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Absolute Maximum Ratings T C = 25 oC unless otherwise noted. Thermal Characteristics Symbol Parameter FCD900N60Z Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage - DC ±20 V - AC (f > 1Hz) ±30 V ID Drain Current - Continuous (TC = 25oC) 4.5 A - Continuous (TC = 100oC) 3.5 IDM Drain Current - Pulsed (Note 1) 13.5 A EAS Single Pulsed Avalanche Energy (Note 2) 47.5 mJ IAR Avalanche Current (Note 1) 1 A EAR Repetitive Avalanche Energy (Note 1) 0.52 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25oC) 52 W - Derate Above 25oC0.42 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCD900N60Z Unit RθJC Thermal Resistance, Junction to Case, Max. 2.4 oC/W RθJA Thermal Resistance, Junction to Ambient, Max. 100 oC/W |
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