Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS76SB10 Datenblatt(PDF) 2 Page - List of Unclassifed Manufacturers |
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1PS76SB10 Datenblatt(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 4 page 2 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB10 FEATURES • Low forward voltage • Guard ring protected • Very small plastic SMD package. APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes. DESCRIPTION Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: S0. The marking bar indicates the cathode. olumns 12 MGU328 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION 1PS76SB10 − plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 30 V IF continuous forward current − 200 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 − 300 mA IFSM non-repetitive peak forward current tp <10ms − 600 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C |
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Ähnliche Beschreibung - 1PS76SB10 |
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