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CAT22C10JI-20TE13 Datenblatt(PDF) 1 Page - Catalyst Semiconductor |
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CAT22C10JI-20TE13 Datenblatt(HTML) 1 Page - Catalyst Semiconductor |
1 / 10 page 1 CAT22C10 256-Bit Nonvolatile CMOS Static RAM FEATURES s Single 5V Supply s Fast RAM Access Times: –200ns –300ns s Infinite E2PROM to RAM Recall s CMOS and TTL Compatible I/O s Power Up/Down Protection s 100,000 Program/Erase Cycles (E2PROM) s Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30 µA Max. s JEDEC Standard Pinouts: –18-pin DIP –16-pin SOIC s 10 Year Data Retention s Commercial, Industrial and Automotive Temperature Ranges DESCRIPTION The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typi- cally within 1.5 µs. The CAT22C10 features unlimited RAM write operations either through external RAM PIN CONFIGURATION PIN FUNCTIONS Pin Name Function A0–A5 Address I/O0–I/O3 Data In/Out WE Write Enable CS Chip Select RECALL Recall STORE Store VCC +5V VSS Ground NC No Connect writes or internal recalls from E2PROM. Internal false store protection circuitry prohibits STORE operations when VCC is less than 3.0V. The CAT22C10 is manufactured using Catalyst’s ad- vanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles (E2PROM) and has a data retention of 10 years. The device is available in JEDEC approved 18-pin plastic DIP and 16- pin SOIC packages. SOIC Package (J) DIP Package (P) © 1998 by Catalyst Semiconductor, Inc. Characteristics subject to change without notice NC A4 A3 A2 Vss A1 CS STORE A0 NC Vcc A5 I/O3 I/O2 I/O1 I/O0 WE RECALL 1 2 3 4 5 6 7 8 9 14 13 11 10 12 15 16 17 18 1 2 3 4 5 6 7 8 14 13 11 10 9 12 15 16 A1 A2 A3 A4 A0 A5 Vcc I/O4 I/O3 I/O2 I/O1 Vss WE CS STORE RECALL 22C10 F01 22C10 F02 Doc. No. 25018-0A 2/98 N-1 |
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