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STGW20V60DF Datenblatt(PDF) 9 Page - List of Unclassifed Manufacturers

Teilenummer STGW20V60DF
Bauteilbeschribung  600 V, 20 A very high speed trench gate field-stop IGBT
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Hersteller  ETC2 [List of Unclassifed Manufacturers]
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STGW20V60DF Datenblatt(HTML) 9 Page - List of Unclassifed Manufacturers

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STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF
Electrical characteristics
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
AM17188v1
1
10
100
010
20
30
40
ts (ns)
Ic (A)
V
CC = 400V, VGE = 15V,
Tj =175
°C, Rg = 10 Ω
t doff
t don
t r
t f
AM17189v1
t f
1
10
100
0
10203040
ts (ns)
Rg (Ω)
VCC= 400V, VGE= 15V,
Tj=175 °C Ic = 40 A
t doff
t don
t r
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
AM17190v1
0
10
20
30
40
50
0
500
1000
1500
2000
2500
Irm (A)
di/dt (A/μs)
V
r = 400V, IF = 20 A
25°C
175 °C
AM17191v1
0
20
40
60
80
100
120
140
160
180
0
500
1000
1500
2000
2500
trr (μs)
di/dt (A/μs)
V
r = 400V, IF = 20 A
25 ºC
175 ºC
AM17192v1
0
200
400
600
800
1000
1200
1400
0
500
1000
1500
2000
2500
Qrr (nC)
di/dt (A/μs)
V
r = 400V, IF = 40 A
25°C
175°C
AM17193v1
0
100
200
300
400
500
600
700
800
0
500
1000
1500
2000
2500
Err (μJ)
di/dt (A/μs)
V
r = 400 V, IF = 20 A
175°C
25°C


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