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1N483B Datenblatt(PDF) 1 Page - Compensated Deuices Incorporated

Teilenummer 1N483B
Bauteilbeschribung  GENERAL PURPOSE SILICON DIODES
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Hersteller  CDI-DIODE [Compensated Deuices Incorporated]
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Logo CDI-DIODE - Compensated Deuices Incorporated

1N483B Datenblatt(HTML) 1 Page - Compensated Deuices Incorporated

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FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO-7 outline
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
200 ˚C/W maximum
THERMAL IMPEDANCE: (ZOJX): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
• AVAILABLE IN
JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
1N483B
1N485B
1N486B
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating:1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
TYPE
VRM
V RWM
I O
I O
I FSM
TA = 150°C
TP = 1/120 s
TA = 25°C
V (pk)
V (pk)
mA
mA
A
1N483B
8070
20
050 2
1N485B
180180
20
0 50 2
1N486B
250225
20
0 50 2
TYPE
VF
I R1 at V RWM I R2 at V RM
I R3 at V RWM
@100mA
TA = 25°C
TA = 25°C
TA = 150°C
V dc
nA dc
µA
µA dc
1N483B
0.8 - 1.0
25
100
5
1N485B
0.8 - 1.0
25
100
5
1N486B
0.8 - 1.0
25
100
5
0.085/0.125
2.16/3.18


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