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KSE45H Datenblatt(Datasheet) 1 Page - Fairchild Semiconductor

Teile-Nr. KSE45H
Beschreibung  General Purpose Power Switching Applications
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300µs, Duty cycle≤2%
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
: KSE45H 1,2
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
- 30
- 45
- 60
- 80
V
V
V
V
VEBO
Emitter-Base Voltage
- 5
V
IC
Collector Current (DC)
- 10
A
ICP
*Collector Current (Pulse)
- 20
A
PC
Collector Dissipation (TC=25°C)
50
W
PC
Collector Dissipation (Ta=25°C)
1.67
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICES
Collector Cut-off Current
VCE = Rated, VCEO, VEB = 0
-10
µA
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
-100
µA
hFE
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
VCE = - 1V, IC = - 2A
35
60
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
IC = - 8A, IB = - 0.8A
IC = - 8A, IB = - 0.4A
-1
-1
V
V
VBE(sat)
*Base-Emitter Saturation Voltage
IC = - 8A, IB = - 0.8A
-1.5
V
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 0.5A
40
MHz
Cob
Output Capacitance
VCB = - 10V, f = 1MHz
230
pF
tON
Turn ON Time
VCC =20V, IC = - 5A
IB1 = - IB2 = - 0.5A
135
ns
tSTG
Storage Time
500
ns
tF
Fall Time
100
ns
KSE45H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A
• Fast Switching Speeds
• Complement to KSE44H
1.Base
2.Collector
3.Emitter
1
TO-220




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