2SCR573D datasheet(2/7 Pages) ROHM

Teilenummer	2SCR573D

Bauteilbeschribung	NPN 3.0A 50V Middle Power Transistor

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Hersteller	ROHM [Rohm]

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2SCR573D

Datasheet

l

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Symbol

Values

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEO

50

V

Emitter-base voltage

VEBO

6

V

Collector current

IC

3

A

ICP*1

6

A

Base current

IB

0.8

A

Power dissipation

PD*2

10

W

Junction temperature

Tj

150

℃

Range of storage temperature

Tstg

-55 to +150

℃

l

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ.

Max.

Collector-base breakdown

voltage

BVCBO

IC = 100μA

50

-

V

Collector-emitter breakdown

voltage

BVCEO

IC = 1mA

50

-

V

Emitter-base breakdown voltage

BVEBO

IE = 100μA

6

-

V

Collector cut-off current

ICBO

VCB = 50V

-

1

μA

Emitter cut-off current

IEBO

VEB = 4V

-

1

μA

Collector-emitter saturation voltage

VCE(sat)

IC = 1A, IB = 50mA

-

130

350

mV

DC current gain

hFE

VCE = 3V, IC = 100mA

180

-

450

-

Transition frequency

fT

*3

VCE = 10V, IE = -600mA,

f = 100MHz

-

320

-

MHz

Output capacitance

Cob

VCB = 10V, IE = 0A,

f = 1MHz

-

20

-

pF

Turn-On time

ton*4

IC = 1.5A, VCC = 10V

-

70

-

ns

Storage time

tstg*4

IB1 = 150mA

-

400

-

ns

Fall time

tf*4

IB2 = -150mA

-

120

-

ns

*1　Pw=10ms 1PULSE

*2　Tc=25℃

*3　PULSED

*4　SEE SWITCHING TIME TEST CIRCUIT

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2/6

20131120 - Rev.001

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