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SDN03264G1C61MT-50 Datenblatt(PDF) 7 Page - List of Unclassifed Manufacturers

Teilenummer SDN03264G1C61MT-50
Bauteilbeschribung  256MB DDR ??SDRAM SoDIMM
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Data Sheet
Rev.1.0
21.05.2008
Swissbit Germany AG
Wolfener Straße 36
Fon: +49 (0) 30 93 69 54 - 0
www.swissbit.com
Page 7
D-12681 Berlin
Fax: +49 (0) 30 93 69 54 - 55
eMail: firma@swissbit-germany.com
of 12
IDD Specifications AND CONDITIONS
(0°C ≤ TA ≤ + 70°C ; V DDQ = +2.5V ± 0.2V, VDD = +2.5V ± 0.2V) see Note 1 on Page 9
max.
Parameter
& Test Condition
Symb.
3200-3033
2700-2533
Unit
OPERATING CURRENT *) : One device bank; Active-
Precharge;
tRC= tRC (Min); tCK = tCK (Min); DQ, DM and DQS inputs
changing
once per clock cycle; Address and control inputs
changing once every two clock cycles
IDDO
620
520
mA
OPERATING CURRENT :*)
One device bank; Active-Read-Precharge;
Burst = 2; tRC= tRC (Min);
tCK = tCK (Min);IOUT = 0mA;
Address and control inputs changing once per clock
cycle
IDD1
780
640
mA
PRECHARGE POWER-DOWN STANDBY CURRENT:
All device banks idle;
Power-down mode;
tCK = tCK (Min); CKE = (LOW)
IDD2P
20
20
mA
IDLE STANDBY CURRENT: CS# = HIGH; All device
banks idle;
tCK = tCK (Min); CKE= HIGH; Address and other control
inputs changing once per clock cycle.
VIN = VREF for DQ, DQS, and DM
IDD2F
220
180
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One
device bank active; Power-down mode; tCK = tCK
(Min);CKE = LOW
IDD3P
180
140
mA
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE =
HIGH; One device bank; Active-Precharge; tRC= tRAS
(Max); tCK = tCK (Min); DQ, DM and DQS inputs
changing twice per clock cycle; Address and other
control inputs changing once per clock cycle
IDD3N
240
200
mA
OPERATING CURRENT:
Burst = 2; Reads; Continous burst; One bank active;
Address and control inputs changing once per clock
cycle; tCK = tCK (Min);
IOUT = 0mA
IDD4R
840
660
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous
burst; One device bank active; Address and control
inputs changing once per clock cycle; tCK = tCK (Min);
DQ, DM, and DQS inputs changing twice per clock
cycle
IDD4W
860
780
mA
tRC = tRC (Min)
IDD5
1380
1160
mA
AUTO REFRESH CURRENT
tRC = 7.8125µs
IDD6
44
40
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
IDD7
24
20
mA
OPERATING CURRENT*): Four device bank interleaving
READs (BL =4) with auto precharge, tRC = tRC (Min);
tCK = tCK (Min); Address and control inputs change only during
Active READ, or WRITE commands
IDD8
1920
1620
mA
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW)
mode.


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