Datenblatt-Suchmaschine für elektronische Bauteile |
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CZTUX87 Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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CZTUX87 Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page DESCRIPTION: The CENTRAL SEMICONDUCTOR CZTUX87 type is a NPN Silicon Power Transistor epoxy molded in a surface mount package, designed for high voltage switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Emitter Voltage VCEV 900 V Collector-Emitter Voltage VCEO 450 V Emitter-Base Voltage VEBO 5.0 V Collector Current IC 0.5 A Peak Collector Current ICM 1.0 A Base Current IB 1.0 A Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance ΘJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS ICEV VCE=900V, VBE=1.5V 100 µA ICEV VCE=900V, VBE=1.5V, TA=125°C 1.0 mA IEBO VEB=5.0V 1.0 mA BVCEO IC=30mA 450 V VCE(SAT) IC=100mA, IB=10mA 0.8 V VCE(SAT) IC=200mA, IB=20mA 1.0 V VBE(SAT) IC=200mA, IB=20mA 1.0 V hFE VCE=5.0V, IC=40mA 12 fT VCE=10V, IC=50mA, f=1.0MHz 20 MHz ts VCC=250V, IC=200mA, IB1=40mA, IB2=80mA 4.5 µs tf VCC=250V, IC=200mA, IB1=40mA, IB2=80mA 0.5 µs CZTUX87 SURFACE MOUNT HIGH VOLTAGE NPN POWER TRANSISTOR SOT-223 CASE Central Semiconductor Corp. TM R0 ( 27-August 2001) |
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