BCW68H datasheet(4/8 Pages) INFINEON

Teilenummer	BCW68H

Bauteilbeschribung	PNP Silicon AF Transistors

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Hersteller	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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4 / 8 page

2011-09-15

4

BCW67, BCW68

DC Electrical Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VCEsat

-

0.3

0.7

V

Base emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

IC = 500 mA, IB = 50 mA

VBEsat

-

1.25

2

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 20 MHz

fT

-

200

-

MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

-

6

-

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

-

60

-

1Pulse test: t < 300µs; D < 2%

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BCW68H Datenblatt(PDF) 4 Page - Infineon Technologies AG

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