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2SD1782G-Q-AE3-R Datenblatt(PDF) 2 Page - Unisonic Technologies

Teilenummer 2SD1782G-Q-AE3-R
Bauteilbeschribung  POWER NPN TRANSISTOR
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2SD1782
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-107.a
ABSOLUTE MAXIMUM RATINGS (T
A=25
°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
0.5
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=50µA
80
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=2mA
80
V
Emitter-Base Breakdown Voltage
BVEBO
IE=50µA
5
V
Collector Cutoff Current
ICBO
VCB=50V
0.5
µA
Emitter Cutoff Current
IEBO
VEB=4V
0.5
µA
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500 mA, IB=50mA
0.2
0.5
V
DC Current Transfer Ratio
hFE
VCE=3V, IC=100mA
120
390
Transition Frequency
fT
VCE=10V, IE=-50mA, f=100MHz
120
MHz
Output Capacitance
Cob
VCB=10V, IE=0A, f=1MHz
7.5
pF
CLASSIFICATION OF hFE
RANK
Q
R
RANGE
120~270
180~390


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