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2SD1782G-Q-AE3-R Datenblatt(PDF) 2 Page - Unisonic Technologies |
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2SD1782G-Q-AE3-R Datenblatt(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-107.a ABSOLUTE MAXIMUM RATINGS (T A=25 °C) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current IC 0.5 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 °C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=50µA 80 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA 80 V Emitter-Base Breakdown Voltage BVEBO IE=50µA 5 V Collector Cutoff Current ICBO VCB=50V 0.5 µA Emitter Cutoff Current IEBO VEB=4V 0.5 µA Collector-Emitter Saturation Voltage VCE(sat) IC=500 mA, IB=50mA 0.2 0.5 V DC Current Transfer Ratio hFE VCE=3V, IC=100mA 120 390 Transition Frequency fT VCE=10V, IE=-50mA, f=100MHz 120 MHz Output Capacitance Cob VCB=10V, IE=0A, f=1MHz 7.5 pF CLASSIFICATION OF hFE RANK Q R RANGE 120~270 180~390 |
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