6N80 datasheet(4/8 Pages) NELLSEMI

Teilenummer	6N80

Bauteilbeschribung	N-Channel Power MOSFET

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Hersteller	NELLSEMI [Nell Semiconductor Co., Ltd]

Direct Link	http://www.nellsemi.com

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SEMICONDUCTOR

Nell High Power Products

RoHS

Fig.5 Capacitance vs. drain-source voltage

Fig.8 On-resistance vs. temperature

Junction temperature, T (°C)

J

Fig.7 Breakdown voltage variation

vs. temperature

Junction temperature, T (°C)

J

Fig.6 Gate charge vs. gate-source voltage

Fig.9-2 Transient thermal response curve

for 6N80AF

Drain-Source voltage, V

(V)

DS

500

2500

10

5

0

50

10

20

30

40

Total gate charge, Q (nC)

G

1

1.2

1.1

0.9

0.8

-75 -50

0

-25

100

75

0.0

1.5

1

0.5

-75 -50

0

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6N80 Series

25

50

75

-25

2

2.5

3

175

Drain-source voltage, V

(V)

DS

2000

1500

1000

0

10

1

10

V

= 640V

DS

V

= 400V

DS

2

10

-1

10

-2

10

0

10

1

10

2

10

0

10

3

10

1

10

Fig.9-1 Maximum safe operating area

for 6N80A

Drain-source voltage, V

(V)

DS

2

10

3

10

1

10

2

10

-1

10

-2

10

1

10

C

=C

+C

(C

=shorted)

ISS

GS

GD

DS

C

=C

+C

C

=C

OSS

DS

GD

RSS

GD

Notes:

1.V

=0V

GS

2.f=1MHz

CISS

CRSS

COSS

V

= 160V

DS

*Note:I =7A

D

0

70

60

*Notes:

1.V

=0V

GS

2.I =250µA

D

25

50

150

125

100

150 175

*Notes:

1.V

=10V

GS

2.I =3A

D

0

10

*Notes:

1.T =25°C

J

2.T=150°C

3.Single pulse

Operation in This Area is Limited by RDS(on)

100µs

10µs

DC

10ms

1ms

*Notes:

1.T =25°C

J

2.T=150°C

3.Single pulse

Operation in This Area is Limited by RDS(on)

10ms

100µs

1ms

DC

10µs

100ms

Ähnliche Beschreibung - 6N80

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Ähnliche Teilenummer - 6N80

Ähnliche Beschreibung - 6N80

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