SEMICONDUCTOR

Nell High Power Products

RoHS

RoHS

IRF4410 Series

150

100

50

0

25

50

75

100

125

150

175

Fig.15 Maximum avalanche energy vs.

Junction temperature

Starting T , junction temperature (°C)

J

Notes on Repetitive Avalanche Curves. Fig. 14, 15:

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T

This is validated for every part type.

jmax.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6.l

= Allowable avalanche current.

av

7. T = Allowable rise in junction temperature, not to exceed T

(assumed

max

as 25°C in Fig.14, 15).

▲

t

= Average time in avalanche.

av

D = Duty cycle in avalanche = t

· f

av

R

(D, t

) = Transient thermal resistance, see fig.13

th(j-c)

av

P

= ½ (1.3·BV·l ) =

D(ave)

av

l

= 2

av

▲T/[1.3·

]

th(

)

BV·R

j-c

E

= P

·t

AS(AR)

D(ave)

av

Fig.17 Typical recovery current vs. di /dt

f

Fig.16 Threshold voltage vs. Junction

Temperature

Fig.19 Typical stored charge vs. di /dt

f

Fig.18 Typical recovery current vs. di /dt

f

di /dt (A/μs)

f

Junction temperature,

(°C)

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

-75 -50 -25

0

25

50

100 125 150 175 200

75

D

I

250μA

D =

D

20

15

10

5

0

100

200

300

400

500

600

700

I = 39A

F

V = 85V

R

T =125°C

J

T =25°C

J

20

15

10

5

0

100

200

300

400

500

600

700

di /dt (A/μs)

f

di /dt (A/μs)

f

400

350

300

250

200

150

100

50

0

100

200

300

400

500

600

700

I = 58A

F

V = 85V

R

I = 39A

F

V = 85V

R

T =125°C

J

T =25°C

J

T =25°C

J

T =125°C

J

TOP

Single Pulse

l = 58A

D

BOTTOM

1.0% Duty Cycle

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