November 2013

©2006 Fairchild Semiconductor Corporation

FDD6N50 / FDU6N50 Rev. C1

www.fairchildsemi.com

1

FDD6N50 / FDU6N50

500 V, 6 A, 900 m

Ω

Features

• Low Gate Charge (Typ. 12.8 nC)

• 100% Avalanche Tested

• Improved dv/dt Capability

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

• AC-DC Power Supply

Description

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

G

D

S

I-PAK

D-PAK

G

S

D

G

S

D

Thermal Characteristics

Symbol

Parameter

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU

Unit

Drain-Source Voltage

500

V

Drain Current

6

3.8

A

A

Drain Current

- Pulsed

(Note 1)

24

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

270

mJ

Avalanche Current

(Note 1)

6A

Repetitive Avalanche Energy

(Note 1)

8.9

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate Above 25

°C

89

0.71

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering, 1/8” from Case for

5 Seconds

300

°C

Symbol

Parameter

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU

Unit

Thermal Resistance, Junction-to-Case, Max.

1.4

°C/W

Thermal Resistance, Junction-to-Ambient, Max.

83