IRF830S datasheet(3/9 Pages) VISHAY

Teilenummer	IRF830S

Bauteilbeschribung	Power MOSFET

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Hersteller	VISHAY [Vishay Siliconix]

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Document Number: 91064

www.vishay.com

S11-1049-Rev. C, 30-May-11

3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF830S, SiHF830S

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

91064_01

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 25 °C

4.5 V

VDS, Drain-to-Source Voltage (V)

100

101

100

10-1

101

100

10-1

100

101

VDS, Drain-to-Source Voltage (V)

Bottom

Top

V

GS

15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

4.5 V

20 µs Pulse Width

T

C = 150 °C

91064_02

4.5 V

20 µs Pulse Width

V

DS = 50 V

101

100

10-1

VGS, Gate-to-Source Voltage (V)

56

7

8

910

4

25

°C

150

°C

91064_03

I

D = 3.1 A

V

GS = 10 V

3.0

0.0

0.5

1.0

1.5

2.0

2.5

TJ, Junction Temperature (°C)

91064_04

- 60 - 40 - 20 0

20 40 60 80 100 120 140 160

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