Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3256 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SC3256 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3256 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=8 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=7.5A; IB=0.375A 0.4 V ICBO Collector cut-off current VCB=40V; IE=0 100 µA IEBO Emitter cut-off current VEB=4V; IC=0 100 µA hFE DC current gain IC=1A ; VCE=2V 70 280 fT Transition frequency IC=1A ; VCE=5V 100 MHz Switching times ton Turn-on time 0.1 µs ts Storage time 0.5 µs tf Fall time IC=6A; IB1=0.3A;IB2=-0.3A VCC=20V 0.1 µs hFE Classifications Q R S 70-140 100-200 140-280 |
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