Datenblatt-Suchmaschine für elektronische Bauteile |
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SI7386DP Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI7386DP Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 73108 S-80439-Rev. C, 03-Mar-08 www.vishay.com 3 Vishay Siliconix Si7386DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.000 0.004 0.008 0.012 0.016 0.020 0 1020304050 VGS = 10 V ID - Drain Current (A) VGS = 4.5 V 0 1 2 3 4 5 6 0369 12 15 VDS = 15 V ID = 19 A Qg - Total Gate Charge (nC) 1.0 1.2 1 10 60 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 440 880 1320 1760 2200 0 4 8 121620 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 19 A TJ - Junction Temperature (°C) 0.000 0.006 0.012 0.018 0.024 0.030 02468 10 ID = 19 A VGS - Gate-to-Source Voltage (V) |
Ähnliche Teilenummer - SI7386DP |
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Ähnliche Beschreibung - SI7386DP |
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