Datenblatt-Suchmaschine für elektronische Bauteile |
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FQPF6N80C Datenblatt(PDF) 1 Page - Fairchild Semiconductor |
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FQPF6N80C Datenblatt(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page December 2013 Thermal Characteristics FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 21 nC) • Low Crss (Typ. 8 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. Symbol Parameter FQP6N80C FQPF6N80C / FQPF6N80CT Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.79 2.45 °C/W RθCS Thermal Resistance, Case-to-Sink Typ, Max. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W TO-220 GD S TO-220F G DS G S D * Drain current limited by maximum junction temperature. Symbol Parameter FQP6N80C FQPF6N80C / FQPF6N80CT Unit VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 5.5 5.5 * A - Continuous (TC = 100°C) 3.2 3.2 * A IDM Drain Current - Pulsed (Note 1) 22 22 * A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 680 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 15.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 158 51 W - Derate above 25°C 1.27 0.41 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. 300 °C |
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