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FQPF6N80C Datenblatt(PDF) 2 Page - Fairchild Semiconductor |
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FQPF6N80C Datenblatt(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Package Marking and Ordering Information ©2003 Fairchild Semiconductor Corporation FQP6N80C / FQPF6N80C Rev. C1 www.fairchildsemi.com 2 Electrical Characteristics T C = 25°C unless otherwise noted. Part Number Top Mark Package Reel Size Tape Width Quantity FQP6N80C FQP6N80C TO-220 N/A N/A 50 units Packing Method Tube TO-220F Tube N/A N/A 50 units FQPF6N80C FQPF6N80C Tube N/A N/A 50 units FQPF6N80CT FQPF6N80CT TO-220F Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 800 -- -- V ∆ BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.97 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µ A VDS = 640 V, TC = 125°C -- -- 100 µ A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1010 1310 pF Coss Output Capacitance -- 90 115 pF Crss Reverse Transfer Capacitance -- 8 11 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4) -- 26 60 ns tr Turn-On Rise Time -- 65 140 ns td(off) Turn-Off Delay Time -- 47 105 ns tf Turn-Off Fall Time -- 44 90 ns Qg Total Gate Charge VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4) -- 21 30 nC Qgs Gate-Source Charge -- 6 -- nC Qgd Gate-Drain Charge -- 9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 22 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs -- 615 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µ C |
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