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FQPF6N80C Datenblatt(PDF) 2 Page - Fairchild Semiconductor

Teilenummer FQPF6N80C
Bauteilbeschribung  N-Channel QFET짰 MOSFET 800 V, 5.5 A, 2.5
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Hersteller  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF6N80C Datenblatt(HTML) 2 Page - Fairchild Semiconductor

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Package Marking and Ordering Information
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
www.fairchildsemi.com
2
Electrical Characteristics T
C = 25°C unless otherwise noted.
Part Number
Top Mark
Package
Reel Size
Tape Width
Quantity
FQP6N80C
FQP6N80C
TO-220
N/A
N/A
50 units
Packing Method
Tube
TO-220F
Tube
N/A
N/A
50 units
FQPF6N80C
FQPF6N80C
Tube
N/A
N/A
50 units
FQPF6N80CT
FQPF6N80CT
TO-220F
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 42 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 5.5 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
800
--
--
V
BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.97
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 800 V, VGS = 0 V
--
--
10
µ
A
VDS = 640 V, TC = 125°C
--
--
100
µ
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 2.75 A
--
2.1
2.5
gFS
Forward Transconductance
VDS = 50 V, ID = 2.75 A
--
5.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1010
1310
pF
Coss
Output Capacitance
--
90
115
pF
Crss
Reverse Transfer Capacitance
--
8
11
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 400 V, ID = 5.5 A,
RG = 25 Ω
(Note 4)
--
26
60
ns
tr
Turn-On Rise Time
--
65
140
ns
td(off)
Turn-Off Delay Time
--
47
105
ns
tf
Turn-Off Fall Time
--
44
90
ns
Qg
Total Gate Charge
VDS = 640 V, ID = 5.5 A,
VGS = 10 V
(Note 4)
--
21
30
nC
Qgs
Gate-Source Charge
--
6
--
nC
Qgd
Gate-Drain Charge
--
9
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
5.5
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
22
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 5.5 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 5.5 A,
dIF / dt = 100 A/µs
--
615
--
ns
Qrr
Reverse Recovery Charge
--
5.4
--
µ
C


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