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IRF2907ZSPBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRF2907ZSPBF
Bauteilbeschribung  Advanced Process Technology
Download  12 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF2907ZSPBF Datenblatt(HTML) 1 Page - International Rectifier

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IRF2907ZPbF
IRF2907ZSPbF
IRF2907ZLPbF
07/22/10
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
D2Pak
IRF2907ZSPbF
TO-220AB
IRF2907ZPbF
TO-262
IRF2907ZLPbF
HEXFET® Power MOSFET
VDSS = 75V
RDS(on) = 4.5mΩ
ID = 160A
S
D
G
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wirebond Limited)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.50
l
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
A
°C
°C/W
10 lbf•in (1.1N•m)
300
2.0
± 20
Max.
170
120
680
160 *
270
690
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95489D


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