BC557BTA datasheet(2/6 Pages) FAIRCHILD

Teilenummer	BC557BTA

Bauteilbeschribung	PNP Epitaxial Silicon Transistor

Download	6 Pages

Scroll/Zoom	100%

Hersteller	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

Logo

2 / 6 page

www.fairchildsemi.com

BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.1.0

2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

hFE Classification

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

BC556

-80

V

BC557 / BC560

-50

BC558 / BC559

-30

VCEO

Collector-Emitter Voltage

BC556

-65

V

BC557 / BC560

-45

BC558 / BC559

-30

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current (DC)

-100

mA

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature Range

-65 to +150

°C

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-Off Current

VCB = -30 V, IE = 0

-15

nA

hFE

DC Current Gain

VCE = -5 V, IC = -2 mA

110

800

VCE(sat)

Collector-Emitter Saturation

Voltage

IC = -10 mA, IB = -0.5 mA

-90

-300

mV

IC = -100 mA, IB = -5 mA

-250

-650

VBE(sat)

Collector-Base Saturation Voltage

IC = -10 mA, IB = -0.5 mA

-700

mV

IC = -100 mA, IB = -5 mA

-900

VBE(on)

Base-Emitter On Voltage

VCE = -5 V, IC = -2 mA

-600

-660

-750

mV

VCE = -5 V, IC = -10 mA

-800

fT

Current Gain Bandwidth Product

VCE = -5 V, IC = -10 mA,

f = 10 MHz

150

MHz

Cob

Output Capacitance

VCB = -10 V, IE = 0, f = 1 MHz

6

pF

NF

Noise

Figure

BC556 / BC557 / BC558 V

CE = -5 V, IC = -200 μA,

f = 1 kHz, RG = 2 kΩ

210

dB

BC559 / BC560

1

4

BC559

VCE = -5 V, IC = -200 μA,

RG = 2 kΩ, f = 30 to 15000 MHz

1.2

4.0

BC560

1.2

2.0

Classification

A

B

C

hFE

110 ~ 220

200 ~ 450

420 ~ 800

Ähnliche Beschreibung - BC557BTA

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Unisonic Technologies	2SA1300	110Kb / 3P	PNP EPITAXIAL SILICON TRANSISTOR
Fairchild Semiconductor	FJC1308	446Kb / 5P	PNP Epitaxial Silicon Transistor
	KSA1201	430Kb / 5P	PNP Epitaxial Silicon Transistor
	KSA1203	432Kb / 5P	PNP Epitaxial Silicon Transistor
List of Unclassifed Man...	GM1188	359Kb / 2P	PNP SILICON EPITAXIAL TRANSISTOR
Unisonic Technologies	2SA1020	199Kb / 4P	SILICON PNP EPITAXIAL TRANSISTOR
Fairchild Semiconductor	FJY4002R	290Kb / 4P	PNP Epitaxial Silicon Transistor
Fairchild Semiconductor	FJY4012R	283Kb / 4P	PNP Epitaxial Silicon Transistor
GTM CORPORATION	GM1300	172Kb / 2P	PNP SILICON EPITAXIAL TRANSISTOR
Fairchild Semiconductor	MMBT4403K	60Kb / 4P	PNP Epitaxial Silicon Transistor
Fairchild Semiconductor	MJD45H11	164Kb / 5P	PNP Epitaxial Silicon Transistor

More results

BC557BTA Datenblatt(PDF) 2 Page - Fairchild Semiconductor

BC557BTA Datenblatt(HTML) 2 Page - Fairchild Semiconductor

Ähnliche Teilenummer - BC557BTA

Ähnliche Beschreibung - BC557BTA

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL