Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC3181 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SC3181 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3181 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ,IB=0 120 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VBE Base-emitter voltage IC=4A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 5 µA IEBO Emitter cut-off current VEB=5V; IC=0 5 µA hFE-1 DC current gain IC=1A ; VCE=5V 55 160 hFE-2 DC current gain IC=4A ; VCE=5V 35 fT Transition frequency IC=1A ; VCE=5V 30 MHz Cob Output capacitance IE=0 ; VCB=10V ;f=1MHz 190 pF hFE-1 Classifications R O 55-110 80-160 |
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