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MTB80N08J3 Datenblatt(PDF) 6 Page - Cystech Electonics Corp.

Teilenummer MTB80N08J3
Bauteilbeschribung  N-Channel Enhancement Mode Power MOSFET
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Hersteller  CYSTEKEC [Cystech Electonics Corp.]
Direct Link  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB80N08J3 Datenblatt(HTML) 6 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C909J3
Issued Date : 2013.04.01
Revised Date : 2013.12.30
Page No. : 6/ 9
MTB80N08J3
CYStek Product Specification
Typical Characteristics(Cont.)
Typical Transfer Characteristics
0
5
10
15
20
25
30
02
46
8
10
VGS, Gate-Source Voltage(V)
VDS=10V
Power Derating Curve
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
150
175
TC, Case Temperature(℃)
Transient Thermal Response Curves
0.001
0.01
0.1
1
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Single Pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=3.2°C/W


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