2SC4957 datasheet(2/6 Pages) NEC

Teilenummer	2SC4957

Bauteilbeschribung	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

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2SC4957

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITION

Collector Cutoff Current

ICBO

0.1

µAVCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

75

150

VCE = 3 V, IC = 10 mA*1

Gain Bandwidth Product

fT

12

GHz

VCE = 3 V, IC = 10 mA

Feed-back Capacitance

Cre

0.3

0.5

pF

VCB = 3 V, IE = 0, f = 1 MHz*2

Insertion Power Gain

|S21e|2

911

dB

VCE = 3 V, IC = 10 mA, f = 2.0 GHz

Noise Figure

NF

1.5

2.5

dB

VCE = 3 V, IC = 3 mA, f = 2.0 GH

*1

Pulse Measurement; PW

≤ 350

µs, Duty Cycle ≤ 2 % Pulsed.

*2

Measured with 3 terminals bridge, Emitter and Case should be grounded.

hFE Classification

Rank

T83

Marking

T83

hFE

75 to 150

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

TA – Ambient Temperature – ˚C

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

VBE – Base to Emitter Voltage – V

VCE = 3 V

Free Air

50

200

100

0

50

100

150

40

30

20

10

0

0.5

1.0

VCE = 3 V

180 mW

Ähnliche Teilenummer - 2SC4957

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4957	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4957-T1	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR
California Eastern Labs	2SC4957-T1	727Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Technology Corp	2SC4957	189Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC4956	48Kb / 6P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
	2SC4092	82Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
	2SC5013	52Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5015	51Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5011	52Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5012	50Kb / 7P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC5014	49Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
	2SC4095	107Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
	2SC4093	70Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
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