Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1632 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SD1632 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1632 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 50 µA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=3A ; VCE=10V 5 15 VF Diode forward voltage IC=-4A 2.2 V Switching times tstg Storage time 4 9 µs tf Fall time IC=3A IBend=1A;LLeak=5µH 0.8 µs |
Ähnliche Teilenummer - 2SD1632 |
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Ähnliche Beschreibung - 2SD1632 |
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