Datenblatt-Suchmaschine für elektronische Bauteile |
|
CZT651 Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
|
CZT651 Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPES CBCP68 CBCX68 CMPT651 CZT651 MPS650 MPS651 GROSS DIE PER 5 INCH WAFER 10,583 PROCESS CP314V Small Signal Transistor NPN - High Current Transistor Chip Process EPITAXIAL PLANAR Die Size 40 x 40 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 8.7 MILS Emitter Bonding Pad Area 9.0 x 14 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å www.centra lsemi.com R1 (22-March 2010) |
Ähnliche Teilenummer - CZT651 |
|
Ähnliche Beschreibung - CZT651 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |