Datenblatt-Suchmaschine für elektronische Bauteile |
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CZTUX87 Datenblatt(PDF) 1 Page - Central Semiconductor Corp |
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CZTUX87 Datenblatt(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page GEOMETRY PROCESS DETAILS PRINCIPAL DEVICE TYPE CZTUX87 GROSS DIE PER 5 INCH WAFER 2,500 PROCESS CP250 Power Transistor NPN - High Voltage Transistor Chip BACKSIDE COLLECTOR Die Size 99 x 69 MILS Die Thickness 11.6 MILS Base Bonding Pad Area 18 x 21 MILS Emitter Bonding Pad Area 18 x 26 MILS Top Side Metalization Al-Si - 60,000Å Back Side Metalization Ti/Ni/Au - 5,500Å R0 B E www.centra lsemi.com R0 (19-July 2010) |
Ähnliche Teilenummer - CZTUX87 |
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Ähnliche Beschreibung - CZTUX87 |
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