Datenblatt-Suchmaschine für elektronische Bauteile |
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SI8519-C-IM Datenblatt(PDF) 8 Page - List of Unclassifed Manufacturers |
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SI8519-C-IM Datenblatt(HTML) 8 Page - List of Unclassifed Manufacturers |
8 / 37 page Si85xx 8 Preliminary Rev. 0.4 Figure 1. SOIC-20 Thermal Derating Curve, Dependence of Safety Limiting Values with Case Temperature per DIN EN 60747-5-2 Table 7. Thermal Characteristics Parameter Symbol Test Condition SOIC-20 4x4 mm QFN Unit IC Junction-to-Air Thermal Resistance JA 85 55 °C/W Table 8. Absolute Maximum Ratings1 Parameter Symbol Min Typ Max Units Storage temperature TSTG –65 — +150 °C Ambient temperature under bias TA –40 — +125 °C Junction Temperature TJ — — 150 °C Supply voltage VDD — — 5.75 V Voltage on any pin with respect to ground (not including IIN, IOUT) VIN –0.5 — VDD + 0.5 V Output Current Drive LO —— 10 mA Lead solder temperature (10 s) — — 260 ºC Maximum Input Current Rate of Change — — 1000 A/µs Maximum Peak AC Input Current Limit — — 200 A Thermal Limit (DC Current)2 — — 30 A Maximum Isolation Voltage (QFN) — — 1400 VRMS Maximum Isolation Voltage (SOIC-20) — — 6000 VRMS ESD (CDM) JEDEC (JESD22-C101C) –1.5 +1.5 kV ESD (HBM) JEDEC (JESD22-A114E) –2500 +2500 V ESD (MM) JEDEC (JESD22-A115A) –250 + 250 V Notes: 1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be restricted to conditions as specified in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Refer to “AN329: Extending the Full-Scale Range of the Si85xx” for more information. 0200 150 100 50 40 20 0 Case Temperature (ºC) 10 30 VDD = 5.5 V IIN to IOUT = 20 Amps |
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