Datenblatt-Suchmaschine für elektronische Bauteile |
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STB95N4F3 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STB95N4F3 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 20 page STB95N4F3, STD95N4F3, STP95N4F3 Electrical ratings Doc ID 13288 Rev 4 3/20 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) 1. Current limited by package. Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 65 A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C dv/dt (3) 3. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax. Peak diode recovery voltage slope 8 V/ns EAS (4) 4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V. Single pulse avalanche energy 400 mJ Tj Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit D²PAK DPAK TO-220 Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Rthj-pcb (1) 1. When mounted on 1inch² FR-4 2Oz Cu board. Thermal resistance junction-ambient max 30 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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Ähnliche Beschreibung - STB95N4F3 |
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