2SC5408-T1 datasheet(2/8 Pages) NEC

Teilenummer	2SC5408-T1

Bauteilbeschribung	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

Download	8 Pages

Scroll/Zoom	100%

Hersteller	NEC [NEC]

Direct Link	http://www.nec.com/

Logo

2 / 8 page

2SC5408

2

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0

0.1

µA

Emitter Cut-off Current

IEBO

VEB = 1 V, IC = 0

0.1

µA

DC Current Gain

hFE

VCE = 2 V, IC = 7 mA Note 1

70

140

Gain Bandwidth Product

fT

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

17

GHz

Feed-back Capacitance

Cre

VCB = 2 V, IE = 0, f = 1 MHz Note 2

0.1

0.15

pF

Insertion Power Gain

|S21e|2

VCE = 2 V, IC = 7 mA, f = 2.0 GHz

13

15.5

dB

Noise Figure

NF

VCE = 2 V, IC = 1 mA, f = 2.0 GHz

1.1

1.8

dB

Rank

FB

Marking

T1E

hFE

70 to 40

Notes 1. Pulse measurement PW

≤ 350

µs, duty cycle ≤ 2 %, pulsed

2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.

TYPICAL CHARACTERISTICS (TA = 25

°C)

200

100

0

25

20

200

A

180

A

160

A

140

A

120

A

100

A

80

A

60

A

40

A

15

10

5

0

50

1.0

2.0

3.0

100

150

50

40

30

20

10

0

0.5

1.0

TA - Ambient Temperature - °C

30 mW

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

COLLECTOR CURRENT

vs. COLLECTOR TO EMITTER VOLTAGE

VBE - Base to Emitter Voltage - V

µ

VCE - Collector to Emitter Voltage - V

VCE = 2 V

IB = 20

A

1

500

100

50

20

10

200

2

5

10

20

50

100

DC CURRENT GAIN vs.

COLLECTOR CURRENT

IC - Collector Current - mA

VCE = 1 V

VCE = 2 V

Ähnliche Beschreibung - 2SC5408-T1

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NEC	2SC5409	39Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
	NE699M01	50Kb / 6P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
	NE698M01	60Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIFH-GAIN AMPLIFICATION
	2SC5369	72Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION
New Jersey Semi-Conduct...	2SC3604	198Kb / 2P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC	2SC3604	94Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3587	91Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
	2SC3603	89Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
eleflow technologies co...	2SC3603	222Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION

More results

2SC5408-T1 Datenblatt(PDF) 2 Page - NEC

2SC5408-T1 Datenblatt(HTML) 2 Page - NEC

Ähnliche Teilenummer - 2SC5408-T1

Ähnliche Beschreibung - 2SC5408-T1

Html Pages

1 2 3 4 5 6 7 8

Datenblatt Download

Link URL