Datenblatt-Suchmaschine für elektronische Bauteile |
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TA329Q Datenblatt(PDF) 5 Page - Dynex Semiconductor |
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TA329Q Datenblatt(HTML) 5 Page - Dynex Semiconductor |
5 / 10 page TA329..Q 5/10 Fig.3 Maximum allowable peak on-state current vs pulse width for Tcase = 90˚C. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1 µF, R = 33Ω. 4. Double side cooled. Fig.4 Energy per pulse for trapezoidal pulses Notes: 1. dI/dt = 100A/ µs. 2. VD ≤ 600V. 3. VR = DF451 Diode voltage drop. 4. R.C. snubber. C = 0.1 µF, R = 33Ω. 5. Double side cooled. |
Ähnliche Teilenummer - TA329Q |
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Ähnliche Beschreibung - TA329Q |
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